20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 im-channel 5o volt power mosfets product summary part number irfz30 IRFZ32 vds 50v 50v rds(on) 0.05n o.o?n id 30a 2ba features: ? extremely low rds(on) ? compact plastic package ? fast switching ? low drive current ? ease of paralleling ? excellent temperature stability ? parts per million quality case style and dimensions 10.54(0.415) 1 t * i 13.97 (0.550) max. t max ? ? *| 1 15.09 (0.594) ? mm rt r i i max. i p 1 287(0 113) 2.62 ittihi t ' mmohn 1397 1347' j ? !s.s< 10 < i|j , 37910.149) ... rw (0-1157 t"a ~? 1 15(04 -1 lug 0,131 i - i i re?i4- obain x 6?8ioiisl fotiib + 396(0156) i 1 -? *- ! -_ 1 ? (0 052) *~ 122(0048} terms -source term 2 -drain \m 1 -gate , \ \ 4 sj (q 130)' 4 32(0 uo) u y y 1 t , , 279(01101 1 2 2*9(0 0901 ^j s 33 (02 10) 4 63 (0 190) 4 section x-x 051 (0020) r 1 161 rbd ho 10 055) "s"""si j ?| | |^| caw style to-220ab 0919 (003/1 068610027) dimensions in millimeters and (inches) nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
irfz30, IRFZ32 devices absolute maximum ratings parameter vqs drain - source voltage vgs gate - source wtage pd @ tc = 25c max. ftawer dissipation linear derating factor il"m inductive current, clamped tj operating junction and tgtg storage temperature range lead temperature irfz30 50 50 30 19 80 IRFZ32 50 50 25 16 60 20 75 (sea rg. 14] 0.6 (see fig. 14) (sea fig. 15 and 16) l = 100>h 80 | 60 -65 to 150 300 (0,063 in. (1.6mm) from case for 10s) units v v a a a v w w/k? a "c ?c electrical characteristics @ tc = 25c (unless otherwise specified) parameter bvpss drain ? source breakdown voltage vqsfth) gate threshold vbltage iqss gate-source leakage forward 'gss gate-source leakage reverse 'oss ^'o gate voltage drain current 'd(on) on-state drain current ? ros(on) static drain-source on-state resistance ? g(g forward transconductance ? cjsg input capacitance com output capacitance cfss reverse transfer capacitance 'd(on) turn-on delay time t, rise time 'dlottl turn-off delay time tf fail time on total gate charge (gate-source plus gate-drain) qgs gate-source charge qgd gate-drain ("miller") charge lq internal drain inductance ls internal source inductance type irfz30 IRFZ32 all all all all irfz30 irf232 irfz30 IRFZ32 all all all all all all all all all all all all all min. 50 50 2.0 -- - - - 30 25 - - 9.0 ? ? - - ? - - - ? - typ. - ? - - ? ? ? - - 0.045 0.065 12 1250 650 130 12 18 23 16 26 14 12 3.5 4.5 7.6 max. ? - 4.0 500 -500 250 1000 ? - 0.050 0.070 ? 1600 800 200 25 35 45 35 30 ? - units v v v na na *-a ca a a 0 0 s(u) pp pf pf ns ns ns ns nc nc nc nh nh nh test conditions vqs - ov ij] - 260 ^a vds = vgs- id - 250 m vgs = 2ov vgs = -20v vds = max- rating. vgs ? ov vds = max. rating x 0.8, vgs = ov, tc = 125c vds > !d(on) x rosionlmax.- vgs = 10v vqs - 10v' 'o - 18a vds > 'dlonl x "dslonl max.. id - 16a vgs = ov. vds = zsv, f - see rg. 10 vdd s 25v, id = isa, zq = see fig. 17 (mosfet switching times are operating temperature.) vqs - 10v. !d - 38a- vds see rg. 18 lor test circuit. (g independent of operating tern measured from the contact screw on tab to center of da measured from the drain lead, 6mm (0.25 in.) from package to center of die. measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. 1.0 mhz 60(1 essentially independent of = 0.8 max. rating. ate charge is essentially >eratura) modified mosfet symbol showing the internal device inductances. thermal resistance rthjc junction-tc-case "thcs casa-to-sink fyhja junction-tc-ambient all all all _ - - - 1.0 - 1.67 - 80 k/wffi kw? k/w? mounting surface flat, smooth, and greased; typical socket mount
irfz30, IRFZ32 devices source-drain diode ratings and characteristics t-39-u ic continuous source current [body diode) (cm pulse source current (body dlodo) 0> vgo diode forward voltage ? trr reverse recovery time qrr reverse recovered charge ton forward turn-on time irfz30 IRFZ32 [rfz30 IRFZ32 irfz30 irf232 all all all - - - - ? ? ? ? - ? ? - ? - 160 1.6 30 25 80 60 1.6 1.6 - - intrinsic turn-en time a a a a v v m fc modified mosfet symbol showing the integral o reverse p-n junction rectifier. /ftr tc = 26c, ls = 30a, vgs = 0v tc = 26c, ls = 25a. vgs - v tj - 160c, if = 30a, dlf?t = looa/ps tj = 150c, if = 30a, dlptft = 100a/^s s nrin.lin.ibla turn-on speed is substantially controlled by lg + lq. (d tj - 26c to 160c. pulse test: pulse width ? 300j.s, duty cycle ^ 2%. ? k/w = "c/w w/k = w/'c > repetitive rating: pulse width limited by max. junction temperature see transient thermal impedance curve (fig. s). 10 20 30 40 vqs. orain-to-source voltage ivovts). fig. 1 ? typical output characteristics 2 4 6 8 10 12 14 v6s, gate-to source voltage (volts) fig. 2 ? typical transfer characteristics tc " 25?c rj?150cmax. r,hjc-1-87 k/w single pulse 0.4 0.8 1.2 1.6 2.0 vqs. orain-to-source voltage (volts) 1.0 2 5 10 20 so 100 200 vqs. drain-to source voltage (volts) fig. 3 - typical saturation characteristics fig. 4 ? maximum safe operating area
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